MF161700 - SEMI MF1617 - Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and EPI Substrates by Secondary Ion Mass Spectrometry StdTpc-300 mm Carriers & Physical Interfaces both at the equipment level

both at the equipment level and at the module level (e

previously published March 2012

A notch ground into the edge of the wafer at a specified orientation provides a positive method for such alignment

The domain includes:

MF161700 - SEMI MF1617 - Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and EPI Substrates by Secondary Ion Mass Spectrometry StdTpc-300 mm Carriers & Physical Interfaces both at the equipment levelNOTICE: This Document was reapproved with minor editorial changes. Secondary ion mass spectrometry (SIMS) can measure on polished silicon wafer product the following: the sodium and potassium areal densities that can affect voltage flatband shifts in integrated circuits, and, the aluminum areal density that can affect the thermal oxide growth rate. the iron areal density that can affect gate oxide integrity, minority carrier lifetime, and current